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一种基于负载检测技术的高稳定性瞬态增强LDO
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A High Stability Transient Enhanced LDO Based on Load Detection Technology
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    摘要:

    为提高无片外电容低压差线性稳压器(low-dropout linear regulator, LDO)的瞬态特性, 设计优化负载检测电路和过冲/欠冲抑制电路, 实现一种低功耗高瞬态特性的无片外电容LDO. 负载检测电路通过高比例电流镜采样并跟随LDO负载电流的变化, 自适应地改变误差放大器尾电流的大小以改进系统的带宽与摆率, 从而提高LDO的瞬态响应速度. 在输出电压发生过冲时, 过冲抑制电路利用高通网络检测到功率管栅极电压的变化, 为负载电流开启放电通路, 降低其在输出级的变化量,从而抑制过冲;在输出电压发生欠冲时, 欠冲抑制电路通过为功率管栅极驱动电流开启放电通路,快速提高功率管的输出电流, 进而有效抑制欠冲. 基于0.5 μm CMOS工艺,完成电路设计与测试.结果表明,LDO的输入电压为2~5.5 V, 输出电压为1.2 V;电路最大负载电流为150 mA,线性调整率为1.7 ×10-3;无负载时,静态电流小于6.16 μA;负载电流在1~150 mA@1 μs跳变时,欠冲和过冲电压均小于300 mV.该LDO具有功耗低、瞬态特性高等优势,可满足便携式电子设备的应用需求.

    Abstract:

    To improve the transient characteristics of the output-capacitor less low-dropout linear regulator (LDO), a load detection circuit and overshoot/undershoot suppression circuits are designed and optimized to realize a output-capacitor less LDO with low power consumption and high transient characteristics. By utilizing the high-proportion current mirror to sample and follow the change of the LDO load current, the load detection circuit can adaptively change the tail current of the error amplifier to improve the system’s bandwidth and slew rate, thereby enhancing the transient response speed of the LDO. When overshoot occurs in the output voltage, the overshoot suppression circuit utilizes the high-pass network to detect the change of the gate voltage of the power transistor, enabling a discharge path for the load current to reduce its change in the output stage, so as to suppress the overshoot. When the output voltage undershoot occurs, the undershoot suppression circuit can rapidly increase the output current of the power transistor by opening the discharge path for the gate-drive current of the power transistor, and then effectively suppress the undershoot. Based on 0.5 μm CMOS process, the circuit is designed and tested. The results show that the input voltage of the LDO is 2~5.5 V, and the output voltage is 1.2 V; the maximum load current is 150 mA, with the linear regulation of 1.7×10-3; when there is no load, the quiescent current is less than 6.16 μA; when the load current varies in 1~150 mA@ 1 μs, both the undershoot and overshoot voltages are less than 300 mV. The LDO has the advantages of low power consumption and high transient characteristics, which can meet the application needs of portable electronic devices.

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谢海情 ,赵欣领 ,曾健平 ?,王昌志 ,巩雅楠 ,丁宇航 ,谌运政 ,刘顺城 ,梁文萱 .一种基于负载检测技术的高稳定性瞬态增强LDO[J].湖南大学学报:自然科学版,2025,52(12):137~146

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  • 在线发布日期: 2026-01-06
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