+高级检索
高端口隔离度的太赫兹基波上混频器设计
DOI:
作者:
作者单位:

天津大学微电子学院

作者简介:

通讯作者:

基金项目:

国家重点基础研究发展计划(973计划),国家自然科学基金项目(面上项目,重点项目,重大项目)


Design of Terahertz Fundamental Up-conversion Mixer with Good Port-to-Port Isolation
Author:
Affiliation:

School of Microelectronics, Tianjin University

Fund Project:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
    摘要:

    介绍了一种基于IHP 0.13μm SiGe BiCMOS工艺,具有高的本振(Local Oscillator,LO)/射频(Radio Frequency,RF)及本振/中频(Intermediate Frequency,IF)端口隔离度的太赫兹基波上混频器。该混频器采用了吉尔伯特双平衡结构,本振信号通过共面波导(Coplanar Waveguide,CPW)传输来抑制其在传输过程中由于强寄生耦合效应造成的传输不对称性,降低了由于该不对称性造成的LO/RF端口隔离度恶化的特性,通过采用非对称性的开关互联结构降低本振信号在开关晶体管集电极端寄生耦合的不平衡性,提升本振信号在开关晶体管集电极端的对消效率,通过在版图中合理的布局跨导级晶体管的位置来抑制本振信号在中频端口的泄露。后仿真结果表明:在2.2V的电源电压下,本振信号为230GHz,中频信号在2-12GHz时,该上变混频器工作在218-228GHz时,LO/RF端口隔离度大于24dB, LO/IF端口隔离度大于20dB,转换增益为-4dB - -3.4dB。当中频信号为10GHz时,输出1dB压缩点为-14.8dBm。电路直流功耗为:42.4mW,芯片的核心面积为:0.079mm2。

    Abstract:

    A terahertz fundamental up-conversion mixer with a high local oscillator (LO)/ radio frequency (RF) and local oscillator / intermediate frequency (IF) port isolation was presented, which was in the IHP 0.13μm SiGe BiCMOS process. The mixer adopted Gilbert’s double-balanced structure, local oscillator signal was transmitted through the Coplanar Waveguide (CPW) to suppress the transmission asymmetry caused by the strong parasitic coupling effect in the transmission process, which reduced the characteristic of LO/RF port isolation deterioration caused by the asymmetry. By adopting an asymmetric switch interconnection structure, the imbalance of the parasitic coupling of the local oscillator signal at the collectors of the switching transistors was reduced, and the cancellation efficiency of the local oscillator signal at the collectors of the switching transistors was improved. And the local oscillator signal was suppressed at the port of intermediate frequency by arranging the position of the transconductance transistors in a reasonable layout. The post-simulation results show that under the power supply voltage of 2.2V, the local oscillator signal is 230GHz and the intermediate frequency signal is 2-12GHz, when the up-conversion mixer works at 218-228GHz, the LO/RF port isolation is greater than 24dB, LO/IF port isolation is greater than 20dB, the conversion gain is -4dB to-3.4dB. The output 1dB compression point is -14.8dBm with an intermediate frequency signal is 10GHz. The DC power consumption is 42.4mW, the core area of the chip is 0.079mm2.

    参考文献
    相似文献
    引证文献
文章指标
  • PDF下载次数:
  • HTML阅读次数:
  • 摘要点击次数:
  • 引用次数:
引用本文
历史
  • 收稿日期: 2021-11-29
  • 最后修改日期: 2022-04-20
  • 录用日期: 2022-04-21
  • 在线发布日期:
  • 出版日期:
版权声明:稿件一经被本刊录用,即视为作者将版权授予本刊,本刊有权根据工作需要,允许合作的数据库、新媒体平台及其他媒体进行二次转载、推介、下载和传播,如有异议,请在来稿中声明。
关闭