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Research and Design of SRAM Error Detection Circuit Based on Single Event Effect
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    Abstract:

    To solve the problem of spacecraft static random access memory data error caused by single event effect, the static random access memory online error detection method and circuit implementation technology, based on the combination of error checking and correcting circuit and integrity detector, are studied in this paper. The error checking and correcting circuit is designed using (39,32) Hamming code to realize automatic error detection, and error correction of volatile single-bit when data is accessed. The integrity detector is designed based on the principle of hash function verification to realize periodic cyclic checking of data. Data online error detection circuit is fabricated in CMOS 0.18 μm process. Simulation results show that the circuit can actively periodically check the memory data, correct single-bit errors and detect multi-bit errors, and effectively improve data reliability.

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  • Received:
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  • Online: January 06,2026
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