顾晓峰1,彭宏伟1,梁海莲,董树荣2,刘湖云1.高速小回滞双向SCR的ESD防护器件设计[J].湖南大学学报:自然科学版,2019,(8):105~109
高速小回滞双向SCR的ESD防护器件设计
Design of ESD Protection Device for High Speed and Very Small Snapback DDSCR
  
DOI:
中文关键词:  静电放电  双向可控硅  触发电压  开启速度  漏电流
英文关键词:Electrostatic Discharge(ESD)  dual-directional silicon controlled rectifier  trigger voltage  turn-on speed  leakage current
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作者单位
顾晓峰1,彭宏伟1,梁海莲,董树荣2,刘湖云1 (1. 江南大学 物联网技术应用教育部工程研究中心江苏 无锡 214122 2. 浙江大学 微电子与光电子研究所 浙江 杭州 310027) 
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中文摘要:
      针对可控硅(SCR)结构的静电放电(ESD)防护器件触发电压高、电压回滞幅度大以及开启速度慢等问题,设计了一种RC触发内嵌PMOS DDSCR (DUT3)器件. 基于0.35 μm Bipolar-CMOS-DMOS工艺制备了传统DDSCR (DUT1)、内嵌PMOS DDSCR (DUT2)和DUT3三种器件,利用传输线脉冲系统测试了它们的ESD特性.实验结果表明:与DUT1相比,DUT2触发电压从31.3 V下降至5.46 V,维持电压从3.59 V上升至4.65 V,具有窄小的电压回滞幅度.但是,由于DUT2内嵌PMOS常处于开态,导致DUT2器件漏电流高达10-2 A量级,不适用于ESD防护.通过在DUT2内嵌的PMOS栅上引入RC触发电路,提供固定栅压,获得的DUT3不仅进一步减小了电压回滞幅度,同时具有12.6 ns极短的器件开启时间,与DUT1相比,DUT3开启速度提高了约71.5%,漏电流稳定在10-10 A量级.优化的DUT3器件适用于高速小回滞窄ESD设计窗口低压集成电路的ESD防护.
英文摘要:
      In order to solve the problems such as large trigger voltage, large voltage snapback margin and slow turn-on speed of Electrostatic Discharge(ESD) protection devices based on the Silicon Controlled Rectifier(SCR) structure, a dual-directional SCR(DDSCR) device embedded with PMOS and triggered by the RC circuit(DUT3) was designed. Three types of devices including the conventional DDSCR(DUT1),DDSCR embedded with PMOS (DUT2) and DUT3 were fabricated in a 0.35 μm Bipolar-CMOS-DMOS process. Their ESD characteristics were measured by the transmission line pulse system. The test results show that, compared with DUT1, the DUT2 trigger voltage decreases from 31.3 V to 5.46 V, the holding voltage increases from 3.59 V to 4.65 V,and the voltage snapback margin of DUT3 is very small, but the high leakage current up to 10-2 A makes it unsuitable for ESD protection. By introducing an RC circuit to provide a fixed gate voltage for the embedded PMOS in the DUT2, the modified DUT3 shows not only a further reduced voltage snapback margin but also a shorter response time of only 12.6 ns. Compared with DUT1, the turn-on speed of DUT3 increases by about 71.5%, and the leakage current can be stabilized at the order of 10-10 A. This optimized DUT3 is suitable for ESD protection in the low-voltage integrated circuits with requirements of high-speed, small snapback margin and narrow ESD design windows.
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