夏庆贞1,2,李东泽1,2,常虎东1,孙兵1,刘洪刚1?覮.基于90 nm SOI CMOS工艺的24 GHz信号发生器[J].湖南大学学报:自然科学版,2020,(6):96~102
基于90 nm SOI CMOS工艺的24 GHz信号发生器
24 GHz Signal Generator Based on 90 nm SOI CMOS Technology
  
DOI:
中文关键词:  SOI CMOS  功率放大器  信号发生器
英文关键词:Silicon-On-Insulator Complementary Metal Oxide Semiconductor(SOI CMOS)  power amplifiers  signal generators
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作者单位
夏庆贞1,2,李东泽1,2,常虎东1,孙兵1,刘洪刚1?覮 (1. 中国科学院微电子研究所 高频高压器件与电路研发中心,北京 100029 2. 中国科学院大学北京 100029) 
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中文摘要:
      SOI CMOS工艺具有高的截止频率和良好的温度稳定性,能够满足微波毫米波雷达收发芯片在多种应用场景下的使用要求. 采用90 nm SOI CMOS工艺,设计一种A类无输出阻抗匹配网络Stacked-FET功率放大器,改善了功率放大器的饱和输出功率和可靠性. 基于此功率放大器设计并实现了一款24 GHz信号发生器电路. 通过电磁场仿真分析研究了Dummy金属对片上螺旋电感性能的影响. 经流片加工测试,结果表明, 该信号发生器电路能够输出22.2~24.7 GHz的信号,平均输出功率为8.83 dBm,峰值输出功率为10.5 dBm. 在偏1 MHz和10 MHz处压控振荡器的相位噪声分别为-91 dBc/Hz和-123 dBc/Hz. 芯片面积为1.4 mm × 1.4 mm.
英文摘要:
      SOI CMOS technologies feature high cut-off frequencies and superior temperature stability, which can meet different kinds of application requirements for microwave and millimeter wave radar transceivers. A class-A Stacked-FET power amplifier using 90 nm SOI CMOS technology was designed with output matching network omitted. The saturated output power and reliability of power amplifier were improved. A 24 GHz signal generator was designed based on this power amplifier. Influences of Dummy filled in semiconductor process on the performance of spiral inductor were studied and analyzed using electromagnetic simulations. The circuit was fabricated and tested. Measured results indicated that this chip can transmit a signal operating at 22.2~24.7 GHz with an average output power of 8.83 dBm and a peak output power of 10.5 dBm. The phase noise of the Voltage Controlled Oscillator(VCO) at 1 MHz offset and 10 MHz offset was -91 dBc/Hz and -123 dBc/Hz, respectively. The area of the entire chip was 1.4 mm × 1.4 mm.
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