安文星1,佟玲1,刘亚轩1,张娜2?覮.基于55 nm CMOS工艺的可变增益放大器[J].湖南大学学报:自然科学版,2020,(6):103~108
基于55 nm CMOS工艺的可变增益放大器
A Variable Gain Amplifier Based on 55 nm CMOS Process
  
DOI:
中文关键词:  放大器  互补金属氧化物半导体  宽带  增益控制
英文关键词:amplifier  Complementary Metal Oxide Semiconductor(CMOS)  wideband  gain control
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作者单位
安文星1,佟玲1,刘亚轩1,张娜2?覮 (1. 天津大学 微电子学院天津 3000722. 中国海洋大学 信息科学与工程学院山东 青岛 266100) 
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中文摘要:
      为了实现5G通信系统中高数据传输速率的要求,满足宽带条件下接收信号幅度的大动态范围变化,基于Global Foundries 55 nm CMOS工艺提出一种宽带且增益大范围线性变化的可变增益放大器. 在该可变增益放大器中,采用改进型Cherry-Hooper放大器结构使其动态范围和电路带宽有效扩展,并利用晶体管的可调谐特性,在不使用附加电路的前提下使增益变化具有良好线性,解决了CMOS电路中放大器增益与控制电压非线性变化的难题,同时添加低截止频率的高通滤波器,消除可变增益放大器的直流偏移,并降低其误码率. 版图仿真结果表明,在-33.4~46.9 dB的超宽动态范围内实现增益线性变化,3-dB带宽对应的频率达到1.89 GHz(0.000 12~1.9 GHz),可变增益放大器芯片(核心区域,不含焊盘)面积仅为0.006 mm2. 该可变增益放大器指标完全满足目前5G宽带通信系统的要求.
英文摘要:
      To achieve the demanding of high data transmission and meet large dynamic range under wideband conditions, a wide-band and high dynamic range variable gain amplifier with dB-linear characteristic based on the Global Foundries 55 nm CMOS process is presented. In this variable gain amplifier, a modified Cherry-Hooper amplifier gain cell is adopted to expand the dynamic range and the bandwidth of circuit, and the tunable characteristics of the transistor are used to make the dynamic range more linear and solve the problem that the amplifier's gain variation is nonlinear with the control voltage in the CMOS circuit without any additional exponential circuit. Meanwhile, a high-pass filter with a low cut-off frequency is added to eliminate the DC offset of the variable gain amplifier and reduce its bit error rate. The layout simulation results show that the variable gain amplifier achieves a ultra gain range of -33.4~46.9 dB with dB-linear characteristic, the 3-dB bandwidth is 1.89 GHz which is from 0.000 12 to 1.9 GHz, and the area of the variable gain amplifier chip(core area, excluding PAD) is only 0.006 mm2. All indicators in variable gain amplifier are suitable for the 5G wide-band wireless communication system totally.
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