A linear negative feedback power amplifier （PA） based on gallium arsenide （GaAs） heterojunction bipolar transistor （HBT） in the C-band is proposed. The design employs a three-stage common emitter （CE） structure and utilizes two different active linear biases to enhance the linearity of the PA. Simultaneously， an RLC negative feedback network is incorporated to improve stability and broaden the operational bandwidth. Addressing the issue of gain reduction in traditional feedback network structures， the RLC negative feedback network can effectively mitigate the impact of gain reduction induced by feedback by adjusting the inductance values within the feedback network. Test results demonstrate that， at room temperature， within the frequency range of 5.1 GHz to 7.4 GHz， a gain exceeding 28 dB is achieved. In the linear operating frequency range of 5.9 GHz to 7.1 GHz， the average gain is 29.5 dB， and both S11 and S22 are less than -10 dB. Complying with the wireless LAN standard 802.11a， a 20 MHz 64-QAM signal is utilized and the output power achieving an EVM of -30 dB ranges from 18.9 dBm to 22.5 dBm. Between 5.9 GHz and 6.2 GHz， the saturated output power exceeds 30 dBm， and the maximum power added efficiency （PAE） is greater than 35%.