Junction termination technique is quite necessary in the improvement of the breakdown voltage of a high-voltage 4H-SiC Schottky barrier diode (SBD).The 4H-SiC SBD with junction termination extension (JTE) was simulated with a two-dimensional device simulator ISE-TCAD10.0, and the 4H-SiC SBD with JTE was fabricated according to the simulation optimal parameters. Through experiment verification, a good consistency between simulation and experiment was observed. The ideal breakdown voltage was 2 000 V, which achieved more than 88 percent of the ideal parallel plane junction breakdown voltage, and the leakage current density was as low as 0.1 mA/cm.