A layer of copper thin films was deposited on AlN ceramic substrate in the DC magnetron sputtering method, the influences of deposited temperature on the stress of Cu thin films metallization on AlN substrate were studied in the Xray diffraction (XRD) method, and the effects of deposition temperature on the stress and deformation were also analyzed in the finite element analysis method. The residual stress in Cu film was tensile stresses, which increased first and then decreased with the increase of deposition temperature, and the stress reached the maximal value when the deposition temperature was 200 ℃. The stress of Cu thin films metallization on AlN substrate could be reduced by implanting the transition interface on AlN substrates. The change of stresses was explained according to its microstructure and physical properties.