Abstract:A 450~470 MHz monolithic LNA based on 0.5 μm pHEMT was developed. The developed LNA employs resistive-shunt feedback configuration for input impedance matching, which reduces the chip size of passive elements and make it possible for on-chip fabrication. The measurement results show that the monolithic LNA has a 40 dB gain and a 0.5 dB noise figure, and the remarkable noise performance is attributed to the benefits of the absence of high-loss on-chip inductors and the low noise performance of pHEMT transistors.