To achieve the demanding of high data transmission and meet large dynamic range under wideband conditions, a wide-band and high dynamic range variable gain amplifier with dB-linear characteristic based on the Global Foundries 55 nm CMOS process is presented. In this variable gain amplifier, a modified Cherry-Hooper amplifier gain cell is adopted to expand the dynamic range and the bandwidth of circuit, and the tunable characteristics of the transistor are used to make the dynamic range more linear and solve the problem that the amplifier's gain variation is nonlinear with the control voltage in the CMOS circuit without any additional exponential circuit. Meanwhile, a high-pass filter with a low cut-off frequency is added to eliminate the DC offset of the variable gain amplifier and reduce its bit error rate. The layout simulation results show that the variable gain amplifier achieves a ultra gain range of -33.4~46.9 dB with dB-linear characteristic, the 3-dB bandwidth is 1.89 GHz which is from 0.000 12 to 1.9 GHz, and the area of the variable gain amplifier chip（core area, excluding PAD） is only 0.006 mm2. All indicators in variable gain amplifier are suitable for the 5G wide-band wireless communication system totally.