The second-order temperature compensation was realized by weighted superposition of the first-order temperature compensation voltage and the voltage with high-order temperature term which was conversed from the subthreshold leakage current of MOS transistor. In addition，a high-gain operational amplifier and negative feedback loop were adopted to improve the power supply rejection ratio（PSRR）. Subsequently，a bandgap voltage reference with low temperature drift and high power supply voltage rejection ratio was proposed. Based on 0.18 μm CMOS technology，circuit design and simulation，layout design，and post-simulation were carried out. The results indicated that the output voltage was 1.22 V under the power supply voltage of 1.8 V；the temperature coefficient（TC） was 3.3 ppm/℃ in the temperature range from -40 ℃ to 110 ℃；the PSRR at low frequency was -96 dB@100 Hz；the static current was only 33 μA.