In order to simulate and optimize the Electron Beam Lithography（EBL） process, and to improve the manufacturing quality of EBL layout, our team in Hunan University（HNU） developed a set of Electronic Design Automation（EDA） software toolkit named “HNU-EBL”. In this software，the following functionalities have been implemented：1）Calculation of the scattering process and trajectory of the electron beam in the resist and substrate based on Monte Carlo method；2）Calculation and fitting of the point spread function of electron beam scattering based on the multi-Gaussian plus exponential function models；3）Correction of the proximity and fogging effects and optimization of the incident electron dose distribution based on the GDSII lithography layout；4）Calculation of the energy deposition density under a given incident electron dose distribution based on convolution, and evaluation of the key lithography pattern fidelity metrics such as edge placement error. Using an Exclusive OR（XOR） integrated circuit layout as the lithography target pattern，the EBL process of a 10 kV electron beam in Polymethyl Methacrylate（PMMA） resist and silicon substrate layers is calculated. The functionalities and validity of the HNU-EBL is demonstrated by comparing the developed layout patterns with and without the proximity effect correction. Using exactly the same computing hardware and calculation settings，it is shown that the proposed HNU-EBL EDA software’s efficiency is better than some of the imported mainstream EBL EDA software. The website http://www.ebeam.com.cn has been established, and the HNU-EBL software is licensed to EBL users for free.