A 2.4 GHz integrated single pole three throw （SP3T） radio frequency （RF） switch and low noise amplifier based on a 90 nm SOI CMOS process is designed for wireless local area network （WLAN） applications. The RF switch adopts a low-power equivalent negative voltage biasing method， which can make the off-state transistors obtain an equivalent negative voltage bias state without using negative voltage， thereby improving the linearity of the RF switch. The low noise amplifier uses the negative feedback technique and derivative superposition technique to improve its linearity， and the derivative superposition technique is used to reduce the third-order non-linearity of the low noise amplifier， which further improves the linearity of the negative feedback low noise amplifier. The low noise amplifier is integrated with the RF switch and has a Bypass attenuation path. The measurement results show that the transmitting branch of the RF switch has an insertion loss of 0.95 dB and an input 1 dB compression point of 34 dBm， and the Bluetooth branch of the RF switch has an insertion loss of 1.68 dB and an input 1 dB compression point of 30 dBm. Under 2 V power supply， in the high gain mode， the receiving branch has a gain of 15.8 dB， a noise figure of 1.7 dB and an input third-order intercept point of 7.6 dBm， and a power consumption of 28.6 mW， while in the bypass mode， it has 7.2 dB insertion loss and an input third-order intercept point of 22 dBm.