To meet the high linearity requirement of high-performance RF front-end receivers, a high linearity low noise amplifier (LNA) operating at 2.4 GHz based on SiGe BiCMOS technology is proposed. The amplifier adopts the cascade structure to achieve a balance between gain and noise, and the feedback capacitor is connected in parallel between the input and output of the Cascode structure to achieve simultaneous noise and power match. An improved dynamic bias active current mirror is designed to improve the linearity parameters of the input 1 dB compression point and the input-referred third-order intercept point. To meet the requirements in application, LNA is integrated with an RF switch and power module to form an RF receiver front-end chip for processing and testing. The test results show that: within the operating frequency range of 2.4 ~ 2.5 GHz, the gain of the whole receiver chip is 14.6 ~ 15.2 dB. Return loss < -9.8 dB, and NF < 2.1 dB. At 2.45 GHz, the input 1 dB compression point is -2.7 dBm, and the input-referred third-order intercept point is +12 dBm. The chip area is 1.23 mm×0.91 mm. The test results are consistent with the simulation results, and the designed LNA exhibits good linearity performance.
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FU Haipeng?,SHI Xinyu.2.4 GHz频段射频前端高线性度SiGe低噪声放大器设计[J].湖南大学学报:自然科学版,2023,(10):77~83